skiip 2013gb122-4dl b 7 - 26 20.03.01 08:53 ? by semikron i. power section 4 * skiip 513gb122ct per phase absolute maximum ratings symbol conditions values units igbt v ces 1200 v v cc 1) operating dc link voltage 900 v v ges 20 v i c t heat sink = 25 (70) c 2000 ( 1500 ) a inverse diode i f t heat sink = 25 (70) c 2000 ( 1500 ) a i fsm t j = 150 c, t p = 10ms; sin 17280 a i 2 t (diode) diode, t j = 150 c, 10ms 1493 ka 2 s t j , (t stg ) -40...+150 (125) c v isol ac, 1min. 3000 v i c-package t heat sink = 70c, t term 3) =115c 4 * 500 a characteristics symbol conditions min. typ. max. units igbt v cesat 5) i c = 1200 a, t j = 25 (125)c - 2,0 ( 2,2 ) 2,3 v v ceo v ge = 15v; t j = 25 (125) c - 1,2 ( 1,1 ) 1,3 ( 1,2 ) v r ce v ge = 15v; t j = 25 (125) c - 0,8 ( 1,1 ) 1,0 ( 1,3 ) m w i c = 1200 a vcc= 600 v - 360 - mj e on + e off 4) t j =125c vcc= 900 v - 640 - mj i ces v ge =0,v ce =v ces ,t j =25(125) c - 4,8 ( 144 ) - ma l ce top, bottom - 3 - nh r cc-ee terminal-chip, t j =25 c - 0,10 - m w inverse diode v f 5) = v ec i f = 1200 a; t j = 25(125) c - 1,9 ( 1,5 ) 2,2 v v to t j = 25 (125) c - 1,2 ( 0,9 ) 1,4 ( 1,0 ) v r t t j = 25 (125) c - 0,7 ( 0,7 ) 0,7 ( 0,8 ) m w i c = 1200 a vcc= 600 v - 96 - mj e rr 4) t j =125c vcc= 900 v - 146 - mj thermal characteristics r thjs per igbt - - 0,016 c/w r thjs per diode - - 0,031 c/w r thsa 2) l: p16w heat sink; 280 m3/ h - - 0,026 c/w current sensor i p rms t a =100 c , v s upply = 15v 4 * 400 a i pmax rms t 2 s, t a =100 c 4 * 500 a mechanical data m1 dc terminals, si units 4 - 6 nm m2 ac terminals, si units 8 - 10 nm skiip a a 3 sk integrated intel ligent power pack 2-pack skiip 2013gb122-4dl 2) target data housing s43 features skiip technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution low loss igbts cal diode technology integrated current sensor integrated temperature sensor high power density 1) assembly of suitable mkp capacitor per terminal is mandatory (semikron type 41046230 is recommended) 2) d integrated gate driver u with dc-bus voltage measurement (option for gb) l mounted on standard heat sink for forced air cooling w mounted on standard liquid cooled heat sink 3) t term = temperature of terminal 4) with skiip 3 gate driver 5) measured at chip level 8) this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee, expressed or implied is made regarding delivery, performance or suitability.
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